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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Homoepitaxial Growth of 4H-SiC Thin Film Below...

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

299-302

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.299

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Online since:

April 2002

Authors:

Mitsuo Okamoto, Yasunori Tanaka, Ryouji Kosugi, Daisuke Takeuchi, Shinichi Nakashima, Shin Ichi Nishizawa, Kenji Fukuda, Hideyo Okushi, Kazuo Arai

Keywords:

C/Si Ratio, Homoepitaxial Growth, Low-Temperature, Microwave Plasma Chemical Vapor Deposition (μPVCD)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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