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HomeMaterials Science ForumMaterials Science Forum Vols. 389-3933C-SiC Growth on 6H-SiC (0001) Substrates

3C-SiC Growth on 6H-SiC (0001) Substrates

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

315-318

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.315

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Online since:

April 2002

Authors:

Igor Matko, Bernard Chenevier, M. Audier, Roland Madar, M. Diani, L. Simon, L. Kubler, D. Aubel

Keywords:

Twinning, Electron Diffraction (ED), Electron Microscopy, Heteropolytypic Growth, MBE, Silicon Carbide (SiC), X-Ray Photoelectron Diffraction, X-Ray Photoelectron Spectroscopy (XPS)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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