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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Heteroepitaxial Growth and Characteristics of...

Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

319-322

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.319

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Online since:

April 2002

Authors:

Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi

Keywords:

3C-SiC, Heteroepitaxy, Planar Defects, Twin Boundaries, Undulation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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