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Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates
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Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
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Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers
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Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate
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Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry
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In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD
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Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
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Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace
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Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Evaluation of Carbonized Layers for 3C-SiC/Si...

Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

335-338

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.335

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Online since:

April 2002

Authors:

Hideki Shimizu, Takaomi Ohba, Kensaku Hisada

Keywords:

3C-SiC/Si, Carbonization, Ellipsometry, Heteroepitaxial Growth, Interface Layer, Optical Constant, Plasma-Assisted CVD, Silicon Surface

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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