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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC

Authors: Jin Qiang Liu, Edward M. Sanchez, Marek Skowronski

415

Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography

Authors: Etienne Pernot, E. Neyret, Cécile Moulin, Petra Pernot-Rejmánková, Francois Templier, Lea Di Cioccio, Thierry Billon, Roland Madar

419

Structural Defects in Electrically Degraded 4H-SiC PiN Diodes

Authors: P.O.Å. Persson, J.M. Molina-Aldareguia, Peder Bergman, Henrik Jacobsson, T.O. Tuomi, W.J. Clegg, Erik Janzén, L. Hultman

423

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

Authors: Robert E. Stahlbush, Jeffery B. Fedison, Steve Arthur, L.B. Rowland, James W. Kretchmer, Shao Ping Wang

427

Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes

Authors: Augustinas Galeckas, Jan Linnros, Bo Breitholtz

431

Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC

Authors: Jin Qiang Liu, Edward M. Sanchez, Marek Skowronski

435

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide

Authors: Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

439

A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers

Authors: Seoyong Ha, William M. Vetter, Michael Dudley, Marek Skowronski

443

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Authors: Toshiyuki Ohno, Hirotaka Yamaguchi, Kazutoshi Kojima, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Sadafumi Yoshida

447

4H- to 3C-SiC Polytypic Transformation during Oxidation

Authors: Robert S. Okojie, Ming Xhang, P. Pirouz, Sergey P. Tumakha, Gregg Jessen, Leonard J. Brillson

451