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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC

Authors: H.-E. Nilsson, U. Englund, M. Hjelm

537

Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC

Authors: Rajesh Kumar Malhan, J. Kozima, Tetsuya Yamamoto, A. Fukumoto

541

Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis

Authors: A.V. Los, Michael S. Mazzola

545

Electrical Activity of Residual Boron in Silicon Carbide

Authors: L. Storasta, Peder Bergman, Erik Janzén, Christer Hallin

549

Ab Initio Calculations of B Diffusion in SiC

Authors: Riccardo Rurali, E. Hernández, Philippe Godignon, Jose Rebollo, P. Ordejón

553

Aluminum and Boron Diffusion into (1-100) Face SiC Substrates

Authors: Stanislav I. Soloviev, Ying Gao, Yuri I. Khlebnikov, I.I. Khlebnikov, Tangali S. Sudarshan

557

Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC

Authors: B. Aradi, Adam Gali, Peter Deák, Nguyen Tien Son, Erik Janzén

561

Incorporation of Hydrogen (¹H and ²H) into 4H-SiC during Epitaxial Growth

Authors: Margareta K. Linnarsson, Urban Forsberg, Martin S. Janson, Erik Janzén, Bengt Gunnar Svensson

565

Hydrogen Incorporation into SiC Using Plasma-Hydrogenation

Authors: Yaroslav Koshka, W.A. Draper, R.Y. Lakshman, James D. Scofield, Stephen E. Saddow

569

Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC

Authors: Joachim Grillenberger, N. Achtziger, G. Pasold, W. Witthuhn

573