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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Influence of Junction Potential Distribution on...

Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

545-548

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.545

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Online since:

April 2002

Authors:

A.V. Los, Michael S. Mazzola

Keywords:

Emission Coefficient, Large-Signal Modeling, Nitrogen Donor, Nonlinear Arrhenius Plot

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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