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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Physical Mechanism for the Anomalous Behavior of...

Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

541-544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.541

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Online since:

April 2002

Authors:

Rajesh Kumar Malhan, J. Kozima, Tetsuya Yamamoto, A. Fukumoto

Keywords:

Defect, Donors, Ion Implantation, Nitrogen, Phosphorus, Theory, Vacancy

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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