Paper Titles

Electronic Structure of the UD3 Defect in 4H- and 6H-SiC
p.509

Depth Distribution of Lattice Damage-Related D_I and D_II Defects after Ion Implantation and Annealing of 6H-SiC
p.513

Electrical Properties of Neutron-Irradiated Silicon Carbide
p.517

Radiation-Induced Defects in p-Type Silicon Carbide
p.521

Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance
p.525

Electronic Localization around Stacking Faults in Silicon Carbide
p.529

Theoretical Study of Cubic Polytype Inclusions in 4H-SiC
p.533

Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC
p.537

Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC
p.541

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Hole and Electron Effective Masses in 6H-SiC...

Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

525-528

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.525

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Online since:

April 2002

Authors:

Nguyen Tien Son, Christer Hallin, Erik Janzén

Keywords:

Band Structure, Hole and Electron Effective Masses, Optically Detected Cyclotron Resonance, Polaron Effect

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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