Paper Titles

Properties of the UD-1 Deep-Level Center in 4H-SiC
p.505

Electronic Structure of the UD3 Defect in 4H- and 6H-SiC
p.509

Depth Distribution of Lattice Damage-Related D_I and D_II Defects after Ion Implantation and Annealing of 6H-SiC
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Electrical Properties of Neutron-Irradiated Silicon Carbide
p.517

Radiation-Induced Defects in p-Type Silicon Carbide
p.521

Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance
p.525

Electronic Localization around Stacking Faults in Silicon Carbide
p.529

Theoretical Study of Cubic Polytype Inclusions in 4H-SiC
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Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Radiation-Induced Defects in p-Type Silicon...

Radiation-Induced Defects in p-Type Silicon Carbide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

521-524

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.521

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Online since:

April 2002

Authors:

S. Kanazawa, M. Okada, T. Nozaki, K. Shin, S. Ishihara, I. Kimura

Keywords:

Electron Irradiation, Electron Spin Resonance, Neutron Irradiation, Silicon Carbide (SiC), Thermal Annealing

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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