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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Properties of the UD-1 Deep-Level Center in 4H-SiC

Properties of the UD-1 Deep-Level Center in 4H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

505-508

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.505

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Online since:

April 2002

Authors:

Björn Magnusson, Alexsandre Ellison, Erik Janzén

Keywords:

Absorption, Deep Level, FT-IR, Photo-Induced Absorption, Semi-Insulating SiC

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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