Properties of the UD-1 Deep-Level Center in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

505-508

Citation:

B. Magnusson et al., "Properties of the UD-1 Deep-Level Center in 4H-SiC", Materials Science Forum, Vols. 389-393, pp. 505-508, 2002

Online since:

April 2002

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$38.00

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