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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Depth Distribution of Lattice Damage-Related DI...

Depth Distribution of Lattice Damage-Related D_I and D_II Defects after Ion Implantation and Annealing of 6H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

513-516

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.513

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Online since:

April 2002

Authors:

Yaroslav Koshka, Galyna Melnychuck

Keywords:

D_I Center, D_II Center, Ion Implantation, Lattice Damage, Photoluminescence (PL)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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