Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

513-516

DOI:

10.4028/www.scientific.net/MSF.389-393.513

Citation:

Y. Koshka and G. Melnychuck, "Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC", Materials Science Forum, Vols. 389-393, pp. 513-516, 2002

Online since:

April 2002

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