Paper Titles

Vacancy Defects in As-Polished and in High-Fluence H⁺-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
p.493

EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC
p.497

The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
p.501

Properties of the UD-1 Deep-Level Center in 4H-SiC
p.505

Electronic Structure of the UD3 Defect in 4H- and 6H-SiC
p.509

Depth Distribution of Lattice Damage-Related D_I and D_II Defects after Ion Implantation and Annealing of 6H-SiC
p.513

Electrical Properties of Neutron-Irradiated Silicon Carbide
p.517

Radiation-Induced Defects in p-Type Silicon Carbide
p.521

Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance
p.525

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Electronic Structure of the UD3 Defect in 4H- and...

Electronic Structure of the UD3 Defect in 4H- and 6H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

509-512

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.509

Citation:

Cite this paper

Online since:

April 2002

Authors:

Matthias Wagner, Björn Magnusson, W.M. Chen, Erik Janzén

Keywords:

Deep Level Defect, Magneto-Optics, Semi-insulating (SI)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: