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Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance
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Electronic Localization around Stacking Faults in Silicon Carbide
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Theoretical Study of Cubic Polytype Inclusions in 4H-SiC
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Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Electronic Localization around Stacking Faults in...

Electronic Localization around Stacking Faults in Silicon Carbide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

529-532

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.529

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Online since:

April 2002

Authors:

Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

Keywords:

Band-Gap States, First-Principle Calculations, Stacking Fault

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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