Paper Titles

Radiation-Induced Defects in p-Type Silicon Carbide
p.521

Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance
p.525

Electronic Localization around Stacking Faults in Silicon Carbide
p.529

Theoretical Study of Cubic Polytype Inclusions in 4H-SiC
p.533

Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC
p.537

Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC
p.541

Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis
p.545

Electrical Activity of Residual Boron in Silicon Carbide
p.549

Ab Initio Calculations of B Diffusion in SiC
p.553

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Full-Band Monte Carlo Simulation of Electron...

Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

537-540

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.537

Citation:

Cite this paper

Online since:

April 2002

Authors:

H.-E. Nilsson, U. Englund, M. Hjelm

Keywords:

Charge Transport, Impact Ionization, Monte-Carlo Simulation, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: