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Ab Initio Calculations of B Diffusion in SiC
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Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
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Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
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Incorporation of Hydrogen (¹H and ²H) into 4H-SiC during Epitaxial Growth
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Hydrogen Incorporation into SiC Using Plasma-Hydrogenation
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Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC
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Theoretical Studies of Vanadium Impurity in β-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Impurity-Controlled Dopant Activation - The Role...

Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

561-564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.561

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Online since:

April 2002

Authors:

B. Aradi, Adam Gali, Peter Deák, Nguyen Tien Son, Erik Janzén

Keywords:

Dopant, Hydrogen, Incorporation, Passivation, Theory

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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