Paper Titles

Electrical Activity of Residual Boron in Silicon Carbide
p.549

Ab Initio Calculations of B Diffusion in SiC
p.553

Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
p.557

Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
p.561

Incorporation of Hydrogen (¹H and ²H) into 4H-SiC during Epitaxial Growth
p.565

Hydrogen Incorporation into SiC Using Plasma-Hydrogenation
p.569

Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC
p.573

Theoretical Studies of Vanadium Impurity in β-SiC
p.577

New and Improved Quantitative Characterization of SiC Using SIMS
p.581

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Incorporation of Hydrogen (1H and 2H) into 4H-SiC...

Incorporation of Hydrogen (¹H and ²H) into 4H-SiC during Epitaxial Growth

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

565-568

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.565

Citation:

Cite this paper

Online since:

April 2002

Authors:

Margareta K. Linnarsson, Urban Forsberg, Martin S. Janson, Erik Janzén, Bengt Gunnar Svensson

Keywords:

Chemical Vapor Deposition (CVD), Deuterium, Hydrogen, SIMS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: