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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393New and Improved Quantitative Characterization of...

New and Improved Quantitative Characterization of SiC Using SIMS

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

581-584

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.581

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Online since:

April 2002

Authors:

Larry Wang, David B. Sams, Alice Wang, Byoung Suk Park

Keywords:

Detection Limits, Precision, Quantification, Reproducibility, Silicon Carbide (SiC), SIMS

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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