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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Authors: Jun Suda, Shun-ichi Nakamura, Mineo Miura, Tsunenobu Kimoto, Hiroyuki Matsunami

659

Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy

Authors: John Österman, Srinivasan Anand, Margareta K. Linnarsson, Anders Hallén

663

Nanoscale Electrical Characterization of 3C-SiC Layers by Conductive Atomic Force Microscopy

Authors: Akihiro Yahata, Li Zhang, Takashi Shinohe

667

Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

Authors: Yusuke Fukuda, Kouichi Nishikawa, Masaaki Shimizu, Hiroaki Iwakuro

671

Optical and Electrical Characterization of Free-Standing 3C-SiC Films Grown on Undulant 6in Si Substrates

Authors: Toshimichi Yamada, Kohei M. Itoh

675

Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC

Authors: Hideharu Matsuura

679

p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

Authors: Alexander A. Lebedev, Anatoly M. Strel'chuk, D.V. Davydov, N.S. Savkina, Alla S. Tregubova, Alexey N. Kuznetsov, V.A. Soloviev, N.K. Poletaev

683

Scanning Acoustic Microscopy in Porous SiC

Authors: Sergei S. Ostapenko, M.C.D. Smith, I. Tarasov, J.T. Wolan, Marina G. Mynbaeva, J. Goings, J.C.P. McKeon, Stephen E. Saddow

687

Atomic-Scale Passivation of Silicon Carbide Surfaces

Authors: P. Soukiassian

691

Adsorption of Metastable Molecular Oxygen on SiC(0001)-√3 x √3

Authors: Charíya Virojanadara, Leif I. Johansson

697