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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC

Authors: Frank Schmid, Michael Laube, Gerhard Pensl, Günter Wagner, Manfred Maier

787

Codoping of 4H-SiC with N- and P-Donors by Ion Implantation

Authors: Michael Laube, Frank Schmid, Gerhard Pensl, Günter Wagner

791

Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

Authors: Junji Senzaki, Shinsuke Harada, Ryouji Kosugi, Seiji Suzuki, Kenji Fukuda, Kazuo Arai

795

Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Authors: Yasunori Tanaka, Hisao Tanoue, Kazuo Arai

799

Electrical Characteristics of Al⁺ Ion-Implanted 4H-SiC

Authors: Hideaki Tanaka, Satoshi Tanimoto, Mitsugu Yamanaka, Masakatsu Hoshi

803

Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC

Authors: Hiroki Nakamura, H. Watanabe, J. Yamazaki, Nobuo Tanaka, Rajesh Kumar Malhan

807

Comparison between Chemical and Electrical Profiles in Al⁺ or N⁺ Implanted and Annealed 6H-SiC

Authors: Roberta Nipoti, A. Carnera, Vito Raineri

811

Damage Evolution and Recovery in Al-Implanted 4H-SiC

Authors: Yu Long Zhang, William J. Weber, Weilin Jiang, Anders Hallén, G. Possnert

815

Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap

Authors: Kenneth A. Jones, Pankaj B. Shah, Michael A. Derenge, Matthew H. Ervin, G.J. Gerardi, Jaime A. Freitas, G.C.B. Braga, R.D. Vispute, R.P. Sharma, O.W. Holland

819

Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC

Authors: Toshiyuki Ohno, Kensuke Amemiya

823