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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Improvements in Electrical Properties of...

Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

795-798

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.795

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Online since:

April 2002

Authors:

Junji Senzaki, Shinsuke Harada, Ryouji Kosugi, Seiji Suzuki, Kenji Fukuda, Kazuo Arai

Keywords:

Depth Profile, High-Temperature Rapid Thermal Annealing, Ion Implantation, Sheet Resistance, Surface Morphology

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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