Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

795-798

DOI:

10.4028/www.scientific.net/MSF.389-393.795

Citation:

J. Senzaki et al., "Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing", Materials Science Forum, Vols. 389-393, pp. 795-798, 2002

Online since:

April 2002

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$35.00

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