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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Phosphorus Ion Implantation into 4H-SiC (0001) and...

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

783-786

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.783

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Online since:

April 2002

Authors:

Yuki Negoro, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

4H-SiC (11-20) Plane, P⁺Implantation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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