Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

773-778

Citation:

M. Satoh "Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC", Materials Science Forum, Vols. 389-393, pp. 773-778, 2002

Online since:

April 2002

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$38.00

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