Paper Titles

Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide
p.759

Thermoelectric Properties of 3C-SiC Produced by Silicon Carbonization
p.763

The Brittle-to-Ductile Transition in 4H-SiC
p.767

Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
p.773

Range Distributions of Implanted Ions in Silicon Carbide
p.779

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)
p.783

Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
p.787

Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
p.791

Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing
p.795

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Range Distributions of Implanted Ions in Silicon...

Range Distributions of Implanted Ions in Silicon Carbide

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

779-782

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.779

Citation:

Cite this paper

Online since:

April 2002

Authors:

Martin S. Janson, Margareta K. Linnarsson, Anders Hallén, Bengt Gunnar Svensson

Keywords:

Distribution Moments, Ion Implantation, SIMS, Simulation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: