Paper Titles

Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations
p.743

Growth and Characterization of Three-Dimensional SiC Nanostructures on Si
p.747

Hole Resonant Tunneling through SiC/Si-dot/SiC Heterostructures
p.751

Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface Micromachining
p.755

Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide
p.759

Thermoelectric Properties of 3C-SiC Produced by Silicon Carbonization
p.763

The Brittle-to-Ductile Transition in 4H-SiC
p.767

Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
p.773

Range Distributions of Implanted Ions in Silicon Carbide
p.779

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Influence of Deposition Parameters and Temperature...

Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

759-762

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.759

Citation:

Cite this paper

Online since:

April 2002

Authors:

Hoa Thi Mai Pham, Charles R. de Boer, Lukasz Pakula, Pasqualina M. Sarro

Keywords:

IC Compatibility, PECVD, Strain, Stress

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: