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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Modification of SiC Properties by Insertion of Ge...

Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

743-746

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.743

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Online since:

April 2002

Authors:

Hans-Christian Weissker, J. Furthmüller, Friedhelm Bechstedt

Keywords:

Ab Initio, Nanocrystal, Optical Spectra, Transition Probabilities

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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