Paper Titles

Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
p.773

Range Distributions of Implanted Ions in Silicon Carbide
p.779

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)
p.783

Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
p.787

Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
p.791

Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing
p.795

Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
p.799

Electrical Characteristics of Al⁺ Ion-Implanted 4H-SiC
p.803

Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC
p.807

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Codoping of 4H-SiC with N- and P-Donors by Ion...

Codoping of 4H-SiC with N- and P-Donors by Ion Implantation

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

791-794

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.791

Citation:

Cite this paper

Online since:

April 2002

Authors:

Michael Laube, Frank Schmid, Gerhard Pensl, Günter Wagner

Keywords:

Co-Doping, Ion Implantation, Nitrogen, Phosphorus

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: