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Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
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Electrical Characteristics of Al⁺ Ion-Implanted 4H-SiC
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Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC
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Comparison between Chemical and Electrical Profiles in Al⁺ or N⁺ Implanted and Annealed 6H-SiC
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Damage Evolution and Recovery in Al-Implanted 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Micro-Structural and Electrical Properties of...

Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

807-810

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.807

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Online since:

April 2002

Authors:

Hiroki Nakamura, H. Watanabe, J. Yamazaki, Nobuo Tanaka, Rajesh Kumar Malhan

Keywords:

Acceptor, Aluminum (Al), Defect, Ion Implantation, Lamp Annealing, Surface Morphology

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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