Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC
p.807
p.807
Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC
p.811
p.811
Damage Evolution and Recovery in Al-Implanted 4H-SiC
p.815
p.815
Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap
p.819
p.819
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
p.823
p.823
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
p.827
p.827
Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
p.831
p.831
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
p.835
p.835
Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
p.839
p.839
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
823-826
Citation:
Online since:
April 2002
Authors:
Keywords:
Price:
Сopyright:
© 2002 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: