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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
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Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
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Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
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Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
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Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC
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Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Ion Implantation - Tool for Fabrication of...

Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

835-838

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.835

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Online since:

April 2002

Authors:

Evgenia V. Kalinina, G. Kholuyanov, Yu. Gol'dberg, T. Blank, G. Onushkin, Anatoly M. Strel'chuk, G. Violina, V. Kossov, R. Yafaev, Anders Hallén, Andrey O. Konstantinov

Keywords:

Defect, Detector, Diode, Ion Implantation, P-N Junction, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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