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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Ion-Implantation Induced Deep Levels in SiC...

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

847-850

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.847

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Online since:

April 2002

Authors:

Rudi Ono, Makato Fujimaki, Junji Senzaki, Satoshi Tanimoto, Takashi Shinohe, Hideyo Okushi, Kazuo Arai

Keywords:

Deep Level, Depth Profile, ICTS, Ion Implantation, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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