Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

847-850

DOI:

10.4028/www.scientific.net/MSF.389-393.847

Citation:

R. Ono et al., "Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)", Materials Science Forum, Vols. 389-393, pp. 847-850, 2002

Online since:

April 2002

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