Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

863-866

Citation:

W. Bahng et al., "Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer", Materials Science Forum, Vols. 389-393, pp. 863-866, 2002

Online since:

April 2002

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