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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Suppression of Macrostep Formation in 4H-SiC Using...

Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

863-866

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.863

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Online since:

April 2002

Authors:

Wook Bahng, Nam Kyun Kim, Sang Cheol Kim, Geun Ho Song, Eun Dong Kim

Keywords:

Activation Anneal, Cap Oxide, Ion Implantation, Macrostep, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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