Paper Titles

Infrared Investigation of Implantation Damage in 6H-SiC
p.859

Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer
p.863

Masking Process for High-Energy and High-Temperature Ion Implantation
p.867

Laser Crystallization Mechanism of Amorphous SiC Thin Films
p.871

Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon Carbide
p.875

Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices
p.879

CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC
p.885

NiSi₂ Ohmic Contact to n-Type 4H-SiC
p.889

Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
p.893

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Experimental and Computer Simulation Studies of...

Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon Carbide

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

875-878

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.875

Citation:

Cite this paper

Online since:

April 2002

Authors:

William J. Weber, Fei Gao, Weilin Jiang, Ram Devanathan

Keywords:

Amorphisation, Computer Simulation, Defect, Ion Channeling, Irradiation Effects

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: