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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Masking Process for High-Energy and...

Masking Process for High-Energy and High-Temperature Ion Implantation

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

867-870

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.867

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Online since:

April 2002

Authors:

Takasumi Ohyanagi, Hidekatsu Onose, Atsuo Watanabe, Tomoyuki Someya, Toshiyuki Ohno, Kensuke Amemiya, Yutaka Kobayashi

Keywords:

Aluminum (Al), Ion Implantation, Junction Field Effect Transistor (JFET), Mask, Silicon Dioxide

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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