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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Ohmic Contact Structure and Fabrication Process...

Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

879-884

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.879

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Online since:

April 2002

Authors:

Satoshi Tanimoto, Norihiko Kiritani, Masakatsu Hoshi, Hideyo Okushi

Keywords:

4H-SiC, Contact, Contact Annealing, Contact Resistance, α-SiC

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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