Paper Titles

Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices
p.879

CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC
p.885

NiSi₂ Ohmic Contact to n-Type 4H-SiC
p.889

Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
p.893

Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC
p.897

Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact Formation
p.901

Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts
p.905

Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces
p.909

Titanium-Based Ohmic Contact on p-Type 4H-SiC
p.913

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Effects of Interfacial Reactions on Electrical...

Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

897-900

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.897

Citation:

Cite this paper

Online since:

April 2002

Authors:

Sang Youn Han, Nam Kyun Kim, Eun Dong Kim, Jong Lam Lee

Keywords:

Microstructure, Ni Contact, Ohmic Contact, X-Ray Photoelectron Spectroscopy (XPS)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: