Paper Titles

Laser Crystallization Mechanism of Amorphous SiC Thin Films
p.871

Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon Carbide
p.875

Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices
p.879

CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC
p.885

NiSi₂ Ohmic Contact to n-Type 4H-SiC
p.889

Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
p.893

Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC
p.897

Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact Formation
p.901

Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts
p.905

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393NiSi2 Ohmic Contact to n-Type 4H-SiC

NiSi₂ Ohmic Contact to n-Type 4H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

889-892

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.889

Citation:

Cite this paper

Online since:

April 2002

Authors:

Tomonori Nakamura, Masataka Satoh

Keywords:

NiSi₂, Ohmic Contact, Specific Contact Resistance

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: