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Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
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Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
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Infrared Investigation of Implantation Damage in 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Infrared Investigation of Implantation Damage in...

Infrared Investigation of Implantation Damage in 6H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

859-862

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.859

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Online since:

April 2002

Authors:

Jean Camassel, Huiyao Wang, Julien Pernot, Philippe Godignon, Narcis Mestres, Jordi Pascual

Keywords:

Infrared Spectroscopy, Ion Implantation, Radiation Damage

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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