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Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
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Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
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Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC
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Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
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Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Direct Observation of the Solid-Phase...

Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

843-846

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.843

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Online since:

April 2002

Authors:

Osamu Eryu, Daisuke Matsuo, Koji Abe, Kenshiro Nakashima

Keywords:

Amorphous SiC, Ion Implantation, Solid-Phase Recrystallization, Time-Resolved Optical Reflectivity Measurements

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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