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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Annealing Kinetics of Implantation-Induced...

Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

839-842

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.839

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Online since:

April 2002

Authors:

Tomonori Nakamura, Seiken Matsumoto, Tatsunobu Horibe, Masataka Satoh

Keywords:

(0001)-Oriented 6H-SiC, Annealing Kinetics, Ion Implantation-Induced Amorphous Layer

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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