Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC
p.811
p.811
Damage Evolution and Recovery in Al-Implanted 4H-SiC
p.815
p.815
Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap
p.819
p.819
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
p.823
p.823
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
p.827
p.827
Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
p.831
p.831
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
p.835
p.835
Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
p.839
p.839
Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC
p.843
p.843
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Abstract:
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Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
827-830
Citation:
Online since:
April 2002
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Сopyright:
© 2002 Trans Tech Publications Ltd. All Rights Reserved
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