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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Damage Evolution and Recovery in Al-Implanted...

Damage Evolution and Recovery in Al-Implanted 4H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

815-818

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.815

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Online since:

April 2002

Authors:

Yu Long Zhang, William J. Weber, Weilin Jiang, Anders Hallén, G. Possnert

Keywords:

Amorphisation, Ion Channeling, Isochronal Annealing, Nuclear Reaction Analysis, Recrystallization RX, Rutherford Backscattering, Silicon Carbide (SiC), Thermal Recovery

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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