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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Distribution Profile of Deep Levels in SiC...

Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

851-854

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.851

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Online since:

April 2002

Authors:

Makato Fujimaki, Rudi Ono, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Takashi Shinohe, Hideyo Okushi, Kazuo Arai

Keywords:

Deep Level, Depth Profile, Epitaxial Layer, ICTS, Interface

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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