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The Brittle-to-Ductile Transition in 4H-SiC
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Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
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Range Distributions of Implanted Ions in Silicon Carbide
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Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)
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Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
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Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
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Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing
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Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
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Electrical Characteristics of Al⁺ Ion-Implanted 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Electrical Activation of Implanted Phosphorus Ions...

Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

787-790

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.787

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Online since:

April 2002

Authors:

Frank Schmid, Michael Laube, Gerhard Pensl, Günter Wagner, Manfred Maier

Keywords:

4H-SiC, a-Plane, Ion Implantation, Phosphorus, Si-Face

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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