Materials Science Forum Vols. 389-393

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https://doi.org/10.4028/www.scientific.net/MSF.389-393

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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Authors: Mihai Lazar, Christophe Raynaud, Dominique Planson, Marie Laure Locatelli, K. Isoird, Laurent Ottaviani, Jean-Pierre Chante, Roberta Nipoti, Antonella Poggi, G.C. Cardinali

827

Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum

Authors: Akihiko Ohi, Takeshi Ohshima, Masahito Yoshikawa, Kin Kiong Lee, Motohiro Iwami, Hisayoshi Itoh

831

Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

Authors: Evgenia V. Kalinina, G. Kholuyanov, Yu. Gol'dberg, T. Blank, G. Onushkin, Anatoly M. Strel'chuk, G. Violina, V. Kossov, R. Yafaev, Anders Hallén, Andrey O. Konstantinov

835

Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)

Authors: Tomonori Nakamura, Seiken Matsumoto, Tatsunobu Horibe, Masataka Satoh

839

Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC

Authors: Osamu Eryu, Daisuke Matsuo, Koji Abe, Kenshiro Nakashima

843

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Authors: Rudi Ono, Makato Fujimaki, Junji Senzaki, Satoshi Tanimoto, Takashi Shinohe, Hideyo Okushi, Kazuo Arai

847

Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

Authors: Makato Fujimaki, Rudi Ono, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Takashi Shinohe, Hideyo Okushi, Kazuo Arai

851

Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

Authors: G.J. Phelps, Nicolas G. Wright, E.G. Chester, C. Mark Johnson, Anthony G. O'Neill, S. Ortolland, Alton B. Horsfall, Konstantin Vassilevski, Russell Gwilliam

855

Infrared Investigation of Implantation Damage in 6H-SiC

Authors: Jean Camassel, Huiyao Wang, Julien Pernot, Philippe Godignon, Narcis Mestres, Jordi Pascual

859

Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer

Authors: Wook Bahng, Nam Kyun Kim, Sang Cheol Kim, Geun Ho Song, Eun Dong Kim

863