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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Reactive Ion Etching Process of 4H-SiC Using the CHF₃/O₂ Mixtures and a Post-O₂ Plasma-Etching Process

Authors: Soo Chang Kang, Moo Whan Shin

949

Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF₆/O₂ Plasma

Authors: Bum Seok Kim, Jae Kyeong Jeong, Myung Yoon Um, Hoon Joo Na, In Bok Song, Hyeong Joon Kim

953

Photoelectrochemical Etching Process of 6H-SiC Wafers Using HF-Based Solution and H₂O₂ Solution as Electrolytes

Authors: Jung Gyun Song, Moo Whan Shin

957

Oxidation of Silicon Carbide: Problems and Solutions

Authors: Valeri V. Afanas'ev, M. Bassler, Gerhard Pensl, Andre Stesmans

961

Passivation of the 4H-SiC/SiO₂ Interface with Nitric Oxide

Authors: John R. Williams, G.Y. Chung, Chin Che Tin, K. McDonald, D. Farmer, R.K. Chanana, Robert A. Weller, Sokrates T. Pantelides, O.W. Holland, Mrinal K. Das, Leonard C. Feldman

967

Passivation of the Oxide/4H-SiC Interface

Authors: Philippe Jamet, Sima Dimitrijev, P. Tanner

973

Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Authors: C.Y. Lu, James A. Cooper, G.Y. Chung, John R. Williams, K. McDonald, Leonard C. Feldman

977

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Authors: Mrinal K. Das, G.Y. Chung, John R. Williams, N.S. Saks, Lori A. Lipkin, John W. Palmour

981

N₂O Processing Improves the 4H-SiC:SiO₂ Interface

Authors: Lori A. Lipkin, Mrinal K. Das, John W. Palmour

985

Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation

Authors: Eiichi Okuno, Shinji Amano

989