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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Passivation of the 4H-SiC/SiO2 Interface with...

Passivation of the 4H-SiC/SiO₂ Interface with Nitric Oxide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

967-972

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.967

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Online since:

April 2002

Authors:

John R. Williams, G.Y. Chung, Chin Che Tin, K. McDonald, D. Farmer, R.K. Chanana, Robert A. Weller, Sokrates T. Pantelides, O.W. Holland, Mrinal K. Das, Leonard C. Feldman

Keywords:

Interface States (or Traps), Inversion Channel Mobility, Nitric Oxide Passivation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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