Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma-Etching Process

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

949-952

DOI:

10.4028/www.scientific.net/MSF.389-393.949

Citation:

S. C. Kang and M. W. Shin, "Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma-Etching Process", Materials Science Forum, Vols. 389-393, pp. 949-952, 2002

Online since:

April 2002

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