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Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide
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Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact
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Reactive Ion Etching Process of 4H-SiC Using the CHF₃/O₂ Mixtures and a Post-O₂ Plasma-Etching Process
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Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF₆/O₂ Plasma
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Photoelectrochemical Etching Process of 6H-SiC Wafers Using HF-Based Solution and H₂O₂ Solution as Electrolytes
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Oxidation of Silicon Carbide: Problems and Solutions
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Passivation of the 4H-SiC/SiO₂ Interface with Nitric Oxide
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Reactive Ion Etching Process of 4H-SiC Using the...

Reactive Ion Etching Process of 4H-SiC Using the CHF₃/O₂ Mixtures and a Post-O₂ Plasma-Etching Process

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

949-952

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.949

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Online since:

April 2002

Authors:

Soo Chang Kang, Moo Whan Shin

Keywords:

CHF₃/O₂ Gas Mixture, O₂ Plasma Etching, Reactive Ion Etching, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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