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Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
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Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC
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Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
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Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
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Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide
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Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact
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Reactive Ion Etching Process of 4H-SiC Using the CHF₃/O₂ Mixtures and a Post-O₂ Plasma-Etching Process
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Characteristics of Schottky Diodes on 6H-SiC...

Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

933-936

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.933

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Online since:

April 2002

Authors:

Masashi Kato, Masaya Ichimura, Eisuke Arai

Keywords:

6H-SiC, AES Spectrum, Anodic Oxidation, Contact Resistance, Sacrificial Oxidation, Schottky Diode, Surface Layer

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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