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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Reliable Ohmic Contacts to LPE p-Type 4H-SiC for...

Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

917-920

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.917

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Online since:

April 2002

Authors:

Roumen Kakanakov, Liliana Kassamakova, N. Hristeva, G. Lepoeva, N.I. Kuznetsov, Konstantinos Zekentes

Keywords:

High Power Diodes, LPE Layers, Ohmic Contact, Reliability

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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